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  february 2017 docid023274 rev 5 1 / 28 this is information on a product in full production. www.st.com tsx56x, tsx56xa micropower, wide bandwidth (900 khz), 16 v cmos operational amplifiers datasheet - production data features low power consumption: 235 a typ. at 5 v supply voltage: 3 v to 16 v gain bandwidth product: 900 khz typ. low offset voltage a version: 600 v max. standard version: 1 mv max. low input bias current: 1 pa typ. high tolerance to esd: 4 kv wide temperature range: - 40 to 125 c automotive qualification tiny packages available: sot23 - 5, dfn8 2 mm x 2 mm, miniso8, qfn16 3 mm x 3 mm, and tssop14 benefits power savings in power - conscious applications easy interfacing with high impedance sensors related topics see tsx63x series for reduced power consumption (45 ma, 200 khz) see tsx92x series for higher gain bandwidth products (10 mhz) applications industrial and automotive signal conditioning active filtering medical instrumentation high impedance sensors description the tsx56x, tsx56xa series of operational amplifiers benefit from stmicroelectronics? 16 v cmos technology to offer state - of - the - art accuracy and performance in the smallest industrial packages. the tsx56x, tsx56xa have pinouts compatible with industrial standards and offer an outstand ing speed/power consumption ratio, 900 khz gain bandwidth product while consuming only 250 a at 16 v. such features make the tsx56x, tsx56xa ideal for sensor interfaces and industrial signal conditioning. the wide temperature range and high esd tolerance ease use in harsh automotive applications. table 1: device summary version standard v io enhanced v io single tsx561 tsx561a dual tsx562 tsx562a quad tsx564 tsx564a sot23- 5 ( single) miniso8 ( dual) tssop14 ( quad) dfn8 2x2 ( dual) qfn16 3x3 ( quad)
contents tsx56x, tsx56xa 2 / 28 docid023274 rev 5 contents 1 pinout information ................................ ................................ ........... 3 2 absolute maximum ratings and operating conditions ................. 4 3 electrical characteristics ................................ ................................ 6 4 electrical characteristic curves ................................ .................... 12 5 application information ................................ ................................ 16 5.1 operating voltages ................................ ................................ .......... 16 5.2 rail - to - rail input ................................ ................................ ............... 16 5.3 input offset voltage drift over temperature ................................ ....... 16 5.4 long term input offset voltage drift ................................ .................. 17 5.5 pcb layouts ................................ ................................ .................... 18 5.6 macromodel ................................ ................................ .................... 18 6 package information ................................ ................................ ..... 19 6.1 sot23 - 5 package information ................................ ........................ 20 6.2 dfn8 2x2 package information ................................ ....................... 21 6.3 miniso8 package i nformation ................................ ......................... 22 6.4 qfn16 3x3 package information ................................ ..................... 23 6.5 tssop14 package information ................................ ....................... 25 7 ordering information ................................ ................................ ..... 26 8 revision history ................................ ................................ ............ 27
tsx56x, tsx56xa pinout information docid023274 rev 5 3 / 28 1 pinout information figure 1 : pin connections for each package (top view) singl e sot 2 3 - 5 ( tsx 5 61 ) dual qu a d dfn8 2x2 ( tsx562 ) miniso8 ( tsx562 ) qfn 1 6 3x 3 ( tsx5 6 4 ) tssop14 ( tsx564 )
absolute max imum ratings and operating conditions tsx56x, tsx56xa 4 / 28 docid023274 rev 5 2 absolute maximum ratings and operating conditions table 2: absolute maximum ratings (amr) symbol parameter value unit v cc supply voltage (1) 18 v v id differential input voltage (2) v cc v in input voltage (3) (v cc - ) - 0.2 to (v cc+ ) + 0.2 i in input current (4) 10 ma t stg storage temperature - 65 to 150 c t j maximum junction temperature 150 r thja thermal resistance junction - to - ambient (5) (6) sot23 - 5 250 c/w dfn8 2x2 120 miniso8 190 qfn16 3x3 80 tssop14 100 r thjc thermal resistance junction - to - case dfn8 2x2 33 qfn16 3x3 30 esd hbm: human body model (7) 4 kv mm: machine model for tsx561 (8) 200 v mm: machine model for tsx562 and tsx564 (8) 100 cdm: charged device model (9) 1.5 kv latch - up immunity 200 ma notes: (1) all voltage values, except the differential voltage are with respect to the network ground terminal. (2) the differential voltage is the non - inverting input terminal with respect to the inverting input terminal. (3) v cc - v in must not exceed 18 v, vin must not exceed 18 v (4) input current must be limited by a resistor in series with the inputs. (5) r th are typical values. (6) short - circuits can cause excessive heating and destructive dissipation. (7) human body model: 100 pf discharged through a 1.5 k resistor between two pins of the device, done for all couples of pin c ombinations with other pins floating. (8) machine model: a 200 pf cap is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5 ), done for all couples of pin combin ations with other pins floating. (9) charged device model: all pins plus package are charged together to the specified voltage and then discharged directly to ground.
tsx56x, tsx56xa absolute maximum ratings and operating conditions docid023274 rev 5 5 / 28 table 3: operating conditions symbol parameter value unit v cc supply voltage 3 to 16 v v icm common - mode input voltage range (v cc - ) - 0.1 to (v cc+ ) + 0.1 t oper operating free - air temperature range - 40 to 125 c
electrical characteristics tsx56x, tsx56xa 6 / 28 docid023274 rev 5 3 electrical characteristics table 4: electrical characteristics at v cc+ = 3.3 v with v cc - = 0 v, v icm = v cc /2, t amb = 25 c, and r l = 10 k connected to v cc /2 (unless otherwise specified) symbol parameter conditions min. typ. max. unit dc performance v io offset voltage tsx56xa, t = 25 c 600 v tsx56xa, - 40 c < t < 125 c 1800 tsx56x, t = 25 c 1 mv tsx56x, - 40 c < t < 125 c 2.2 v io /t input offset voltage drift - 40 c < t < 125 c (1) 2 12 v/c i ib input bias current, v out = v cc /2 t = 25 c 1 100 (2) pa - 40 c < t < 125 c 1 200 (2) i io input offset current, v out = v cc /2 t = 25 c 1 100 (2) - 40 c < t < 125 c 1 200 (2) cmr1 common mode rejection ratio, cmr = 20 log (v ic /v io ), v ic = - 0.1 v to v cc - 1.5 v, v out = v cc /2, r l > 1 m t = 25 c 63 80 db - 40 c < t < 125 c 59 cmr2 common mode rejection ratio, cmr = 20 log (v ic /v io ), v ic = - 0.1 v to v cc + 0.1 v, v out = v cc /2, r l > 1 m t = 25 c 47 66 - 40 c < t < 125 c 45 a vd large signal voltage gain, v out = 0.5 v to (v cc - 0.5 v), r l > 1 m t = 25 c 85 - 40 c < t < 125 c 83 v oh high - level output voltage, v oh = v cc - v out t = 25 c 70 mv - 40 c < t < 125 c 100 v ol low - level output voltage t = 25 c 70 - 40 c < t < 125 c 100 i out i sink , v out = v cc t = 25 c 4.3 5.3 ma - 40 c < t < 125 c 2.5 i source , v out = 0 v t = 25 c 3.3 4.3 - 40 c < t < 125 c 2.5 i cc supply current, per channel, v out = v cc /2, r l > 1 m t = 25 c 220 300 a - 40 c < t < 125 c 350 ac performance gbp gain bandwidth product r l = 10 k, c l = 100 pf 600 800 khz f u unity gain frequency 690 ?m phase margin 55 degrees g m gain margin 9 db
tsx56x, tsx56xa electri cal characteristics docid023274 rev 5 7 / 28 symbol parameter conditions min. typ. max. unit sr slew rate r l = 10 k, c l = 100 pf, v out = 0.5 v to v cc - 0.5 v 1 v/s e n equivalent input noise voltage density f = 1 khz 55 nv/hz f = 10 khz 29 e n low - frequency peak - to - peak input noise bandwidth, f = 0.1 to 10 hz 16 vpp thd+n total harmonic distortion + noise follower configuration, f in = 1 khz, r l = 100 k, v icm = (v cc - 1.5 v)/2, bw = 22 khz, v out = 1 v pp 0.004 % notes: (1) see section 5.3: "input offset voltage drift over temperature" (2) guaranteed by design
electrical characteristics tsx56x, tsx56xa 8 / 28 docid023274 rev 5 table 5: electrical characteristics at v cc+ = 5 v with v cc - = 0 v, v icm = v cc /2, t amb = 25 c, and r l = 10 k connected to v cc /2 (unless otherwise specified) symbol parameter conditions min. typ. max. unit dc performance v io offset voltage tsx56xa, t = 25 c 600 v tsx56xa, - 40 c < t < 125 c 1800 tsx56x, t = 25 c 1 mv tsx56x, - 40 c < t < 125 c 2.2 v io /t input offset voltage drift - 40 c < t < 125 c (1) 2 12 v/c v io long - term input offset voltage drift t = 25 c (2) 5 nv/ month i ib input bias current, v out = v cc /2 t = 25 c 1 100 (3) pa - 40 c < t < 125 c 1 200 (3) i io input offset current, v out = v cc /2 t = 25 c 1 100 (3) - 40 c < t < 125 c 1 200 (3) cmr1 common mode rejection ratio, cmr = 20 log (v ic /v io ), v ic = - 0.1 v to v cc - 1.5 v, v out = v cc /2, r l > 1 m t = 25 c 66 84 db - 40 c < t < 125 c 63 cmr2 common mode rejection ratio, cmr = 20 log (v ic /v io ), v ic = - 0.1 v to v cc + 0.1 v, v out = v cc /2, r l > 1 m t = 25 c 50 69 - 40 c < t < 125 c 47 a vd large signal voltage gain, v out = 0.5 v to (v cc - 0.5 v), r l > 1 m t = 25 c 85 - 40 c < t < 125 c 83 v oh high - level output voltage, v oh = v cc - v out r l = 10 k, t = 25 c 70 mv r l = 10 k, - 40 c < t < 125 c 100 v ol low - level output voltage r l = 10 k, t = 25 c 70 r l = 10 k, - 40 c < t < 125 c 100 i out i sink v out = v cc , t = 25 c 11 14 ma v out = v cc , - 40 c < t < 125 c 8 i source v out = 0 v, t = 25 c 9 12 v out = 0 v, - 40 c < t < 125 c 7 i cc supply current, per channel, v out = v cc /2, r l > 1 m t = 25 c 235 350 a - 40 c < t < 125 c 400 ac performance gbp gain bandwidth product r l = 10 k, c l = 100 pf 700 850 khz f u unity gain frequency 730 ?m phase margin 55 degrees g m gain margin 9 db
tsx56x, tsx56xa electrical characteristics docid023274 rev 5 9 / 28 symbol parameter conditions min. typ. max. unit sr slew rate r l = 10 k, c l = 100 pf, v out = 0.5 v to v cc - 0.5 v 1.1 v/s e n equivalent input noise voltage density f = 1 khz 55 nv/hz f = 10 khz 29 e n low - frequency peak - to - peak input noise bandwidth, f = 0.1 to 10 hz 15 vpp thd+n total harmonic distortion + noise follower configuration, f in = 1 khz, r l = 100 k, v icm = (v cc - 1.5 v)/2, bw = 22 khz, v out = 2 v pp 0.002 % notes: (1) see section 5.3: "input offset voltage drift over temperature" (2) typical value is based on the v io drift observed after 1000h at 125 c extrapolated to 25 c using the arrhenius law and assuming an activation energy of 0.7 ev. t he operational amplifier is aged in follower mode configuration. (3) guaranteed by design
electrical characteristics tsx56x, tsx56xa 10 / 28 docid023274 rev 5 table 6: electrical characteristics at v cc+ = 16 v with v cc - = 0 v, v icm = v cc /2, t amb = 25 c, and r l = 10 k connected to v cc /2 (unless otherwise specified) symbol parameter conditions min. typ. max. unit dc performance v io offset voltage tsx56xa, t = 25 c 600 v tsx56xa, - 40 c < t < 125 c 1800 tsx56x, t = 25 c 1 mv tsx56x, - 40 c < t < 125 c 2.2 v io /t input offset voltage drift - 40 c < t < 125 c (1) 2 12 v/c v io long - term input offset voltage drift t = 25 c (2) 1.6 nv/ month i ib input bias current, v out = v cc /2 t = 25 c 1 100 (3) pa - 40 c < t < 125 c 1 200 (3) i io input offset current, v out = v cc /2 t = 25 c 1 100 (3) - 40 c < t < 125 c 1 200 (3) cmr1 common mode rejection ratio, cmr = 20 log (v ic /v io ), v ic = - 0.1 v to v cc - 1.5 v, v out = v cc /2, r l > 1 m t = 25 c 76 95 db - 40 c < t < 125 c 72 cmr2 common mode rejection ratio, cmr = 20 log (v ic /v io ), v ic = - 0.1 v to v cc + 0.1 v, v out = v cc /2, r l > 1 m t = 25 c 60 78 - 40 c < t < 125 c 56 svr common mode rejection ratio, 20 log (v cc /v io ), v cc = 3 v to 16 v, v out = v icm = v cc /2 t = 25 c 76 90 - 40 c < t < 125 c 72 a vd large signal voltage gain, v out = 0.5 v to (v cc - 0.5 v), r l > 1 m t = 25 c 85 - 40 c < t < 125 c 83 v oh high - level output voltage, v oh = v cc - v out r l = 10 k, t = 25 c 70 mv r l = 10 k, - 40 c < t < 125 c 100 v ol low - level output voltage r l = 10 k, t = 25 c 70 r l = 10 k, - 40 c < t < 125 c 100 i out i sink v out = v cc , t = 25 c 40 92 ma v out = v cc , - 40 c < t < 125 c 35 i source v out = 0 v, t = 25 c 30 90 v out = 0 v, - 40 c < t < 125 c 25 i cc supply current, per channel, v out = v cc /2, r l > 1 m t = 25 c 250 360 a - 40 c < t < 125 c 400
tsx56x, tsx56xa e lectrical characteristics docid023274 rev 5 11 / 28 symbol parameter conditions min. typ. max. unit ac performance gbp gain bandwidth product r l = 10 k, c l = 100 pf 750 900 khz f u unity gain frequency 750 ?m phase margin 55 degrees g m gain margin 9 db sr slew rate r l = 10 k, c l = 100 pf, v out = 0.5 v to v cc - 0.5 v 1.1 v/s e n equivalent input noise voltage density f = 1 khz 48 nv/hz f = 10 khz 27 e n low - frequency peak - to - peak input noise bandwidth, f = 0.1 to 10 hz 15 vpp thd+n total harmonic distortion + noise follower configuration, f in = 1 khz, r l = 100 k, v icm = (v cc - 1.5 v)/2, bw = 22 khz, v out = 5 v pp 0.000 5 % notes: (1) see section 5.3: "input offset voltage drift over temperature" (2) typical value is based on the v io drift observed after 1000h at 125 c extrapolated to 25 c using the arrhenius law and assuming an activation energy of 0.7 ev. the operational amplifier is aged in follower mode configuration. ( 3) guaranteed by design
electrical characteristic curves tsx56x, tsx56xa 12 / 28 docid023274 rev 5 4 electrical characteristic curves figure 2 : supply current vs. supply voltage at v icm = v cc /2 figure 3 : input offset voltage distribution at v cc = 16 v and v icm = 8 v figure 4 : input offset voltage temperature coefficient distribution at v cc = 16 v, v icm = 8 v figure 5 : input offset voltage vs. input common - mode voltage at v cc = 12 v figure 6 : input offset voltage vs. temperature at v cc = 16 v -40 -40 -20 -20 0 0 20 20 40 40 60 60 80 80 100 100 120 120 -2500 -2000 -2000 -1500 -1000 -1000 -500 0 500 1000 1000 1500 2000 2000 2500 limit f or tsx56x v cc = 16 v , v icm = 8 v limit f or tsx56xa
tsx56x, tsx56xa electrical characteristic curves docid023274 rev 5 13 / 28 figure 7 : output current vs. output voltage at v cc = 3.3 v figure 8 : output current vs. output voltage at v cc = 5 v figure 9 : output current vs. output voltage at v cc = 16 v figure 10 : bode diagram at v cc = 3.3 v figure 11 : bode diagram at v cc = 5 v figure 12 : bode diagram at v cc = 16 v
electrical characterist ic curves tsx56x, tsx56xa 14 / 28 docid023274 rev 5 figure 13 : phase margin vs. capacitive load at v cc = 12 v figure 14 : gbp vs. input common - mode voltage at v cc = 12 v figure 15 : a vd vs. input common - mode voltage at v cc = 12 v figure 16 : slew rate vs. supply voltage figure 17 : noise vs. frequency at v cc = 3.3 v figure 18 : noise vs. frequency at v cc = 5 v
tsx56x, tsx56xa electrical characteristic curves docid023274 rev 5 15 / 28 figure 19 : noise vs. frequency at v cc = 16 v figure 20 : distortion and noise vs. output voltage amplitude figure 21 : distortion and noise vs. amplitude at v icm = v cc /2 and v cc = 12 v figure 22 : distortion and noise vs. frequency
application information tsx56x, tsx56xa 16 / 28 docid023274 rev 5 5 application information 5.1 operating voltages the amplifiers of the tsx56x and tsx56xa series can operate from 3 v to 16 v. their parameters are fully specified at 3.3 v, 5 v, and 16 v power supplies. however, the parameters are very stable in the full v cc range. additionally, the main specifications are guaranteed in extended temperature ranges from - 40 to 125 c. 5.2 rail - to - rail input the tsx56x and tsx56xa devices are built with two complementary pmos and nmos input differential pairs. the devices have a rail - to - rail input, and the input common mode range is extended from (v cc - ) - 0.1 v to (v cc +) + 0.1 v. however, the performance of these devices is clearly optimized for the pmos differential pairs (which means from (v cc - ) - 0.1 v to (v cc +) - 1.5 v). beyond (v cc +) - 1.5 v, the operational amplifiers are still functional but with degraded performance, as can be observed in the electrical characteristics section of this datasheet (mainly v io and gbp). these performances are suitable for a number of applications that need to be rail - to - rail. the devices are designed to prevent phase reversal. 5.3 input offset volta ge drift over temperature the maximum input voltage drift over the temperature variation is defined as the offset variation related to the offset value measured at 25 c. the opera tional amplifier is one of the main circuits of the signal conditioning chain, and the amplifier input offset is a major contributor to the chain accuracy. the signal chain accuracy at 25 c can be compensated during production at application level. the ma ximum input voltage drift over temperature enables the system designer to anticipate the effects of temperature variations. the maximum input voltage drift over temperature is computed using equation 1 . equation 1 where t = - 40 c and 125 c. the datasheet maximum value is guaranteed by measurements on a representative sample size ensuring a c pk (process capability index) greater than 2. ? v i o ? t ma x v i o t v i o 2 5 C t 2 5 c C = c
tsx56x, tsx56xa application information docid023274 rev 5 17 / 28 5.4 long term input offset voltage drift to evaluate product reliability, two types of stress acceleration are used: voltage acceleration, by changing the applied voltage temperature acceleration, by changing the die temperature (below the maximum junction temperatu re allowed by the technology) with the ambient temperature. the voltage acceleration has been defined based on jedec results, and is defined using equation 2 . equation 2 where: a fv is the voltage acceleration factor is the voltage acceleration constant in 1/v, constant technology parameter ( = 1) v s is the stress voltage used for the accelerated test v u is the voltage used for the application the temperature acceleration is driven by the arrhenius model, and is defined in equation 3 . equation 3 where: a ft is the temperature acceleration factor e a is the activation energy of the technology based on the failure rate k is the boltzmann constant (8.6173 x 10 - 5 ev.k - 1 ) t u is the temperatur e of the die when v u is used (k) t s is the temperature of the die under temperature stress (k) the final acceleration factor, a f , is the multiplication of the voltage acceleration factor and the temperature acceleration factor ( equation 4 ). equation 4 a f is calculated using the temperature and voltage defined in the mission profile of the product. the a f value can then be used in equation 5 to calculate the number of months of use equivalen t to 1000 hours of reliable stress duration. equation 5 a f v e v s v u C . = mont h s a f 1 0 00 h 1 2 mo n t h s 24 h 36 5 . 2 5 day s = / a f a f t a f v = a f t e e a k - - - - - - 1 t u 1 t s C = .
appl ication information tsx56x, tsx56xa 18 / 28 docid023274 rev 5 to evaluate the op amp reliability, a follower stress condition is used where v cc is defined as a function of the maximum operating voltage and the absolute maximum rating (as recommended by jedec rules). the v io drift (in v) of the product after 1000 h of stress is tracked with parameters at different measurement conditions (see equation 6 ). equation 6 the long term drift parameter (v io ), estimating the reliability performance of the product, is obtained using the ratio of the v io (input offset voltage value) drift over the square root of the calcul ated number of months ( equation 7 ). equation 7 where v io drift is the measured drift value in the specified test conditions after 1000 h stress duration. 5.5 pcb layouts for correct operation, it is advised to add 10 nf decoupling capacitors as close as possible to the power supply pins. 5.6 macromodel accurate macromodels of the tsx56x, tsx56xa devices are available on the stmicroelectronics website at: www.st.com . these models are a trade - off between accuracy and complexity (that is, time simulation) of the tsx56x and tsx56xa operational amplifiers. they emulate the nominal performance of a typical device within the specified operating conditions mentioned in the datasheet. they also help to validate a design approach and to select the right operational amplifier, but they do not replace on - board measurements . v c c ma x v o p wi t h v i c m v c c 2 = = ? v i o v i o dr i f t m o nth s =
tsx56x, tsx56xa package information docid023274 rev 5 19 / 28 6 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information tsx56x, tsx56xa 20 / 28 docid023274 rev 5 6.1 sot23 - 5 package information figure 23 : sot23 - 5 package outline table 7: sot23 - 5 mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.90 1.20 1.45 0.035 0.047 0.057 a1 0.15 0.006 a2 0.90 1.05 1.30 0.035 0.041 0.051 b 0.35 0.40 0.50 0.014 0.016 0.020 c 0.09 0.15 0.20 0.004 0.006 0.008 d 2.80 2.90 3.00 0.110 0.114 0.118 d1 1.90 0.075 e 0.95 0.037 e 2.60 2.80 3.00 0.102 0.110 0.118 f 1.50 1.60 1.75 0.059 0.063 0.069 l 0.10 0.35 0.60 0.004 0.014 0.024 k 0 degrees 10 degrees 0 degrees 10 degrees
tsx56x, tsx56xa package information docid023274 rev 5 21 / 28 6.2 dfn8 2x2 package information figure 24 : dfn8 2x2 package outline table 8: dfn8 2x2 mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.70 0.75 0.80 0.028 0.030 0.031 a1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 d 2.00 0.079 e 2.00 0.079 e 0.50 0.020 l 0.045 0.55 0.65 0.018 0.022 0.026
package information tsx56x, tsx56xa 22 / 28 docid023274 rev 5 6.3 miniso8 package information figure 25 : miniso8 package outline table 9: miniso8 mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 1.1 0.043 a1 0 0.15 0 0.006 a2 0.75 0.85 0.95 0.030 0.033 0.037 b 0.22 0.40 0.009 0.016 c 0.08 0.23 0.003 0.009 d 2.80 3.00 3.20 0.11 0.118 0.126 e 4.65 4.90 5.15 0.183 0.193 0.203 e1 2.80 3.00 3.10 0.11 0.118 0.122 e 0.65 0.026 l 0.40 0.60 0.80 0.016 0.024 0.031 l1 0.95 0.037 l2 0.25 0.010 k 0 8 0 8 ccc 0.10 0.004
tsx56x, tsx56xa package information docid023274 rev 5 23 / 28 6.4 qfn16 3x3 package information figure 26 : qfn16 3x3 package outline e b o tt o m v i e w p i n # 1 i d 1 4 e c a a 1 p l a n e s e a t i n g c c 2 x 2 x d b c c a b b a c si de v i e w i nd e x a r e a ( d/ 2xe/ 2) aaa aaa top vi ew ccc eee l 5 8 bbb bbb c 9 12 13 16 r0.11
package information tsx56x, tsx56xa 24 / 28 docid023274 rev 5 table 10: qfn16 3x3 mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.50 0.65 0.020 0.026 a1 0 0.05 0 0.002 b 0.18 0.25 0.30 0.007 0.010 0.012 d 3.00 0.118 e 3.00 0.118 e 0.50 0.020 l 0.30 0.50 0.012 0.020 aaa 0.15 0.006 bbb 0.10 0.004 ccc 0.10 0.004 ddd 0.05 0.002 eee 0.08 0.003
tsx56x, tsx56xa package information docid023274 rev 5 25 / 28 6.5 tssop14 package information figure 27 : tssop14 package outline table 11: tssop14 mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 1.20 0.047 a1 0.05 0.15 0.002 0.004 0.006 a2 0.80 1.00 1.05 0.031 0.039 0.041 b 0.19 0.30 0.007 0.012 c 0.09 0.20 0.004 0.0089 d 4.90 5.00 5.10 0.193 0.197 0.201 e 6.20 6.40 6.60 0.244 0.252 0.260 e1 4.30 4.40 4.50 0.169 0.173 0.176 e 0.65 0.0256 l 0.45 0.60 0.75 0.018 0.024 0.030 l1 1.00 0.039 k 0 8 0 8 aaa 0.10 0.004 aaa
ordering information tsx56x, tsx56xa 26 / 28 docid023274 rev 5 7 ordering information table 12: order codes order code temperature range channel number package packaging marking tsx561ilt - 40 to 125 c 1 s?23 - 5 tape and reel k23 tsx562iq2t 2 dfn8 2x2 tsx562ist miniso8 tsx564iq4t 4 qfn16 3x3 tsx564ipt tssop14 tsx5641 TSX561IYLT (1) - 40 to 125 c automotive grade 1 s?23 - 5 k116 tsx562iyst (1) 2 miniso8 tsx564iypt (1) 4 tssop14 tsx5641y tsx561ailt - 40 to 125 c 1 s?23 - 5 k117 tsx562aist 2 miniso8 tsx564aipt 4 tssop14 tsx564ai tsx561aiylt (1) - 40 to 125 c automotive grade 1 s?23 - 5 k118 tsx562aiyst (1) 2 miniso8 tsx564aiypt (1) 4 tssop14 tsx564aiy notes: (1) qualified and characterized according to aec q100 and q003 or equivalent, advanced screening according to aec q001 & q 002 or equivalent
tsx56x, tsx56xa revision histo ry docid023274 rev 5 27 / 28 8 revision history table 13: docu ment revision history date revision changes 06 - aug - 2012 1 initial release. 18 - sep - 2012 2 added tsx562, tsx564, tsx562a, and tsx564a devices. updated features, description, figure 1, table 1 (added dfn8, miniso8, qfn16, and tssop14 package). updated table 1 (updated esd mm values). updated table 4 and table 5 (added footnotes), section 5 (added figure 24 to figure 28 and table 8 to table 12), table 13 (added dual and quad devices). minor corrections throughout document. 23 - may - 2013 3 replaced the silhouette, pinout, package diagram, and mechanical data of the dfn8 2x2 and qfn16 3x3 packages. added benefits and related products. table 1: updated r thja values and added r thjc values for dfn8 2x2 and qfn16 3x3. updated section 4.3, section 4.4, and sec tion 4.6 replaced figure 23: sot23 - 5 package mechanical drawing and table 7: sot23 - 5 package mechanical data. 09 - aug - 2013 4 added so8 package for dual version tsx562 and tsx562a. table 2: updated for so8 package table 13: added order codes tsx562idt, tsx5 62iydt, tsx562aidt, tsx562aiydt; updated automotive grade status. 07 - feb - 2017 5 removed so8 package table 8: "dfn8 2x2 mechanical data" : removed "n" table 11: "tssop14 mechanical data" : add ed "l" and " l1" in inches; updated "aaa" in inches. table 12: "order codes" : removed tsx562idt, tsx562iydt, tsx562aidt, tsx562aiydt. updated terminology
tsx56x, tsx56xa 28 / 28 docid023274 rev 5 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from t he information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2017 stmicroelectronics C all rights reserved


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